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| LED - CHIP Radiation Type Technology ELC-870-27 Electrodes Infrared DDH AlGaAs/AlGaAs N (cathode) up Outline (dimensions in microns) n-side electrode, gold alloy epitaxial n-AlGaAs 120 360 150 active layer epitaxial p-AlGaAs p-side electrode, gold alloy 360 ELC-07 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Parameter Forward voltage Reverse voltage Radiant power* Peak wavelength Spectral bandwidth at 50% Switching time Test conditions IF = 20 mA IR = 100 A IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Symbol VF VR e p 0.5 tr, tf 5 3.5 860 4.5 875 45 25 890 Min Typ 1.4 Max 1.7 Unit V V mW nm nm ns *Measured on bare chip on TO-18 header Labeling Type Lot N e (min, typ), VF (typ, max) Quantity ELC-870-27 Packing Chips on adhesive film with wire-bond side on top rev.09/02 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str. 325 b, Hs. 201, Tel.: +49-30-6576 2543, Fax.: +49-30-6576 2545 |
Price & Availability of ELC-870-27
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